Presentation + Paper
24 February 2020 Optical self-injection stabilization of a passively mode-locked quantum dot on silicon laser
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010F (2020) https://doi.org/10.1117/12.2547151
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Passively mode-locked InAs/InGaAs quantum dot on silicon lasers emitting at 1310nm are promising sources for high-speed high-capacity communication applications. Optical self-injection stabilization of a monolithic passively mode-locked quantum dot on Silicon laser with an absorber section length to total length ratio of 18% is investigated experimentally. A repetition rate tuning range of 24MHz around the free-running repetition rate of 9.4 GHz and a pulse-to-pulse timing jitter reduction by a factor of 2.5 from 150 fs to 59 fs are achieved for an external optical cavity length of 5.8m with fine-delay control. Obtained experimental results are in good quantitative agreement with simulation results obtained by a stochastic time-domain model.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dominik Auth, Songtao Liu, Justin Norman, John E. Bowers, and Stefan Breuer "Optical self-injection stabilization of a passively mode-locked quantum dot on silicon laser", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010F (24 February 2020); https://doi.org/10.1117/12.2547151
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Picosecond phenomena

Semiconductor lasers

Mode locking

Silicon

Laser stabilization

Quantum dots

Stochastic processes

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