The results collected within this paper are explained by considering that stress promotes the diffusion of defects towards the active region of the devices. This mechanism results in a decrease in the SRH recombination lifetime, and in the subsequent increase in threshold current and drop in sub-threshold emission. An increase in the SRH rate next to the quantum dots can also reduce the injection efficiency into the QDs, thus inducing a drop in the slope efficiency of the lasers.
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