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24 February 2020 High-power laser diodes with ultra-narrow waveguides for pulse operation
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Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010N (2020)
Event: SPIE OPTO, 2020, San Francisco, California, United States
The results of designing, manufacturing and investigating characteristics of AlGaAs/InGaAs/GaAs lasers with ultranarrow waveguides are presented. Low threshold current density near 40 A/cm2 has been observed for the lasers with quantum wells. We have demonstrated the possibility of obtaining up to 5 W of output power in continuous mode and up to 40 W in pulsed mode, with a beam convergence (FWHM) of 17.8° It is demonstrated that such lasers can exhibit main characteristics similar to conventional laser heterostructures and allow a potential for further improvement and optimization.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitrii Veselov, Yulia Bobretsova, Vyacheslav Golovin, Dmitry Nikolaev, Sergey Slipchenko, Nikita Pikhtin, and Peter Kop’ev "High-power laser diodes with ultra-narrow waveguides for pulse operation", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010N (24 February 2020);

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