Paper
24 February 2020 Comparison of self-mode-locking in monolithic and external cavity diode laser at 1550 nm
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011T (2020) https://doi.org/10.1117/12.2545780
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this work, a comparison of self-mode-locking of a 100 GHz repetition-rate monolithic diode as a stand-alone laser source and whilst employed in an external cavity arrangement at 1550 nm is reported. We operated our chip at a forward current slightly above the monolithic chip's lasing threshold and compensated the chirp by a single mode fiber. Ultrashort pulses with 1 ps pulse-width were generated. Changes in the dispersion compensation parameters due to the changed cavity dispersion were analyzed.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ali Alloush, Amer Bassal, Carsten Brenner, Catherine Fortin, Karim Mekhazni, Piero Gamarra, Cosimo Calo, and Martin R. Hofmann "Comparison of self-mode-locking in monolithic and external cavity diode laser at 1550 nm", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011T (24 February 2020); https://doi.org/10.1117/12.2545780
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KEYWORDS
Dispersion

Semiconductor lasers

Ultrafast phenomena

Molybdenum

Electrocardiography

Picosecond phenomena

Mode locking

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