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25 February 2020 WS2 monolayer based light emitting devices fabricated by scalable deposition techniques
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Transition metal dichalcogenides (TMDC) have become attractive candidates for 2D electronics and optoelectronics. While several concepts for light emitting devices have been reported, many of them realized using exfoliated TMDC flakes of micrometer size, only few approaches tackle the challenge of upscaling to relevant device sizes. We demonstrate a light emitting diode based on WS2 monolayers in a scalable design. The devices are fabricated by combining two industrially relevant deposition processes in a vertical p-n architecture: Metal organic CVD (MOCVD) is used to realize the optically active WS2 monolayers, while ZnO deposited by spatial atomic layer deposition (sALD) is employed as an electron injection layer on the cathode side. Organic layers spin-coated on an ITO covered glass substrate provide hole injection and transport. The resulting devices exhibit rectifying behavior and red electroluminescence from an area of 6 mm2.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tilmar Kümmell, Dominik Andrzejewski, Yannick Beckmann, Mohamed Abdelbaky, Travis Yeow, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Kevin Musselman, and Gerd Bacher "WS2 monolayer based light emitting devices fabricated by scalable deposition techniques", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020P (25 February 2020);


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