Advances in in-situ metrology during epitaxy of UV-LEDs and related optical devices (Conference Presentation)

Kolja Haberland

doi:10.1117/12.2542676

9 March 2020 Advances in in-situ metrology during epitaxy of UV-LEDs and related optical devices (Conference Presentation)

Kolja Haberland

Author Affiliations +

Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 1130219 (2020) https://doi.org/10.1117/12.2542676
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The epitaxial growth of UV-C-LED-structures in metal organic vapor phase epitaxy is very challenging. To control and improve the growth process, optical in-situ metrology is therefore indispensable. However, the in-situ metrology itself is also affected by some of the process related circumstances such as patterned substrates or thin layer thickness. In this talk we will provide insight into the challenges and benefits of in-situ metrology during growth of UV-C-LED-structures and we will show how these issues can be overcome. We will also show, that these advanced techniques can also be used to improve epitaxy of other optical devices besides UV-LEDs.

Conference Presentation

Citation Download Citation

Kolja Haberland "Advances in in-situ metrology during epitaxy of UV-LEDs and related optical devices (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130219 (9 March 2020); https://doi.org/10.1117/12.2542676

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