CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11304 > Article
Paper
26 February 2020 Influence of mechanical bending strain on bias-stress stability of flexible top-gate p-type SnO TFTs
I-Chun Cheng, Shu-Ming Hsu, Wei-Chen Lin, Jian-Zhang Chen
Author Affiliations +
Proceedings Volume 11304, Advances in Display Technologies X; 113040K (2020) https://doi.org/10.1117/12.2543792
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this paper, flexible coplanar top-gate p-type SnO TFTs are demonstrated. The TFT performance was optimized by adjusting the post-deposition annealing temperature of the SnO channel. The on/off current ratio of the TFT first improves and then degrades as the channel annealing temperature increases. With an optimized annealing temperature of 175C, the flexible SnO TFT exhibits a field-effect mobility of 0.71 cm2/V-s, threshold voltage of 5.2 V, subthreshold swing of 1.6 V/decade, and on/off current ratio of 1.6 x 103. The gate-bias stress stability of the optimized TFT was then investigated. When the TFT is at flat state, the threshold voltage shifts after bias-stressed at +10 V and -10 V for 10000 s are 0.2 V and nearly 0 V, respectively. The electrical stability degrades slightly when the TFT is subjected to both mechanical tensile and compressive strains. At a compressive strain of 0.25%, the threshold voltage shifts increase to 0.8 V and -0.3 V for positive and negative bias stress, respectively. At a tensile strain of 0.25%, the corresponding values are 0.7 V and -0.2 V. Compared with unpassivated bottom-gate SnO TFTs, the gate-bias stress stability is greatly improved.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
I-Chun Cheng, Shu-Ming Hsu, Wei-Chen Lin, and Jian-Zhang Chen "Influence of mechanical bending strain on bias-stress stability of flexible top-gate p-type SnO TFTs", Proc. SPIE 11304, Advances in Display Technologies X, 113040K (26 February 2020); https://doi.org/10.1117/12.2543792
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 6 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Annealing
Oxides
Flexible circuits
Thin films
Transistors
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top