Novel unit pixel design for achieving 1μm pixel pitch will be presented. VST (vertically stacked transistor) structure will be introduced. In VST structure, the driving TFT is stacked on the data line. VST structure has the merits for reducing horizontal pixel pitch without introducing expensive high-definition lithography tool. The technology compatible with 0.5μm critical dimension can be used for fabrication of 1μm pixel pitch SLM.
Alternative structure for achieving small pitch pixel is the adopting VTFT (vertical channel thin film transistor). VTFT means that the channel direction is vertical to SLM plane. The footprint of VTFT is very small, for required area is only the overlap region of active layer and source/drain layer.
Cross-talk between adjacent pixels can interfere the rotation of LC molecule. This phenomenon will be very critical for accurate phase modulation for 1μm pixel pitch SLM. Novel concept for reducing cross-talk will be also presented with experimental results.