6 October 1989 Phase-Locked Arrays Of InGaAsP/InP Diode Lasers Grown By Low-Pressure Metalorganic Chemical Vapor Deposition
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Proceedings Volume 1131, Optical Space Communication; (1989) https://doi.org/10.1117/12.961541
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Results on phase-locked arrays of InGaAsP/InP index-guided diode lasers grown entirely by low pressure metalorganic chemical vapour deposition are presented. Two different array structures are compared : 1) the evanescently coupled array of inverted channeled substrate planar lasers and 2) the Y-junction coupled array of buried ridge lasers in order to assess their potential as sources of high powers in stable and narrow beam. Single-lobe beam operation is achieved by evanescent coupling, while the device is shown to be sensitive to fabrication and operation conditions and not practical as high power source. Uncoated Y-coupled arrays exhibit output power up to 158 mW CW/facet when bonded on diamond heatsink. Such devices are expected to give enhanced performance by further improvement in design and fabrication and should prove useful for free space optical communications.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Lozes-Dupuy, F. Lozes-Dupuy, S. Bonnefont, S. Bonnefont, A. Bensoussan, A. Bensoussan, M. Delort, M. Delort, G. Vassilieff, G. Vassilieff, H. Martinot, H. Martinot, R. Blondeau, R. Blondeau, M. Krakowski, M. Krakowski, D. Rondi, D. Rondi, "Phase-Locked Arrays Of InGaAsP/InP Diode Lasers Grown By Low-Pressure Metalorganic Chemical Vapor Deposition", Proc. SPIE 1131, Optical Space Communication, (6 October 1989); doi: 10.1117/12.961541; https://doi.org/10.1117/12.961541

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