Plasma antennas formed in a Ge crystal under laser irradiation

N. N. Bogachev; N. G. Gusein-zade; S. A. Filatova; V. A. Kamynin; S. Yu. Kazantsev; S. V. Podlesnykh; V. E. Rogalin; D. V. Shokhrin; A. I. Trikshev; V. B. Tsvetkov; I. V. Zhluktova

doi:10.1117/12.2553483

11 December 2019 Plasma antennas formed in a Ge crystal under laser irradiation

N. N. Bogachev, N. G. Gusein-zade, S. A. Filatova, V. A. Kamynin, S. Yu. Kazantsev, S. V. Podlesnykh, V. E. Rogalin, D. V. Shokhrin, A. I. Trikshev, V. B. Tsvetkov, I. V. Zhluktova

Author Affiliations +

Proceedings Volume 11322, XIV International Conference on Pulsed Lasers and Laser Applications; 113221P (2019) https://doi.org/10.1117/12.2553483
Event: XIV International Conference on Pulsed Lasers and Laser Applications (AMPL-2019), 2019, Tomsk, Russian Federation

Abstract

The possibilities of using plasma formed by laser radiation in Ge- and Si semiconductors to create plasma antennas are analyzed. The dependences of the amplitude of the emitted microwave signal in the range of 6-7.5 GHz on the laser power and the length of the irradiated section on the semiconductor plate, which served as a transmitting vibrating antenna, were obtained. It is shown that the amplitude of the transmitted signal during the formation of a plasma antenna in Si and Ge crystals can be increased by more than an order of magnitude. The proposed method for creating a semiconductor plasma antenna with initiation by laser radiation has great prospects for creating materials with controlled electromagnetic characteristics in the radio, microwave and THz spectral ranges.

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N. N. Bogachev, N. G. Gusein-zade, S. A. Filatova, V. A. Kamynin, S. Yu. Kazantsev, S. V. Podlesnykh, V. E. Rogalin, D. V. Shokhrin, A. I. Trikshev, V. B. Tsvetkov, and I. V. Zhluktova "Plasma antennas formed in a Ge crystal under laser irradiation", Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113221P (11 December 2019); https://doi.org/10.1117/12.2553483

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