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11 December 2019 Plasma antennas formed in a Ge crystal under laser irradiation
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Proceedings Volume 11322, XIV International Conference on Pulsed Lasers and Laser Applications; 113221P (2019) https://doi.org/10.1117/12.2553483
Event: XIV International Conference on Pulsed Lasers and Laser Applications (AMPL-2019), 2019, Tomsk, Russian Federation
Abstract
The possibilities of using plasma formed by laser radiation in Ge- and Si semiconductors to create plasma antennas are analyzed. The dependences of the amplitude of the emitted microwave signal in the range of 6-7.5 GHz on the laser power and the length of the irradiated section on the semiconductor plate, which served as a transmitting vibrating antenna, were obtained. It is shown that the amplitude of the transmitted signal during the formation of a plasma antenna in Si and Ge crystals can be increased by more than an order of magnitude. The proposed method for creating a semiconductor plasma antenna with initiation by laser radiation has great prospects for creating materials with controlled electromagnetic characteristics in the radio, microwave and THz spectral ranges.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Bogachev, N. G. Gusein-zade, S. A. Filatova, V. A. Kamynin, S. Yu. Kazantsev, S. V. Podlesnykh, V. E. Rogalin, D. V. Shokhrin, A. I. Trikshev, V. B. Tsvetkov, and I. V. Zhluktova "Plasma antennas formed in a Ge crystal under laser irradiation", Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113221P (11 December 2019); https://doi.org/10.1117/12.2553483
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