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23 March 2020 Novel monitoring of EUV litho cluster for manufacturing insertion
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Abstract
Sustaining optimum EUV litho-cluster performance requires monitoring the dimensional variance of representative patterns at high speed and sampling density. We present NXE3400 monitoring results obtained with an optical technique whose amplified sensitivity to dimensional variance increases with decreasing pitch. The scalable technique enables quantitative tracking of site-to-site pattern profile and fidelity and it is applied here on 5nm-node-relevant EUV dense features (line/space width, line/space ends in elongated contact holes). We benchmark against conventional monitoring methods to demonstrate capability improvements. We finally introduce complementary methods which enable a robust manufacturing insertion of EUV technology; such as 2-dimensional feature monitoring and stochastic defect prediction.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Truffert, Kit Ausschnitt, Vineet V. Nair, and Koen D'Havé "Novel monitoring of EUV litho cluster for manufacturing insertion", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230S (23 March 2020); https://doi.org/10.1117/12.2551881
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