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23 March 2020 CLEAN TRACK solutions for defectivity and CD control towards 5 nm and smaller nodes
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Although being progressively introduced to mass production, extreme ultraviolet (EUV) lithography still faces major challenges for 5nm and smaller nodes due to the impact of stochastic and processing failures, resulting in very narrow defect process windows. 1 These failures are strongly linked to critical dimension (CD) variations.2 Therefore, careful control of CD is now directly linked to defect reduction in addition to more conventional in-film particles/developer residues reduction. Photoresist profiles are also believed to be one possible limiting factor and improvements via collapse control or increased resist mask thickness for etch transfer need to be considered. In this paper, most recent understandings regarding defect process window limitations and optimization of processes to further enable narrow pitch EUV lithography will be presented.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arnaud Dauendorffer, Takahiro Shiozawa, Keisuke Yoshida, Noriaki Nagamine, Yuya Kamei, Shinichiro Kawakami, Satoru Shimura, Kathleen Nafus, Akihiro Sonoda, and Philippe Foubert "CLEAN TRACK solutions for defectivity and CD control towards 5 nm and smaller nodes", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113232A (23 March 2020);

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