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24 March 2020 Self-forming nanogap diodes operate beyond 10 GHz enabled via adhesion lithography (Conference Presentation)
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Abstract
Harnessing the omnipresent radio frequency (RF) waves intend to explore the new diode technologies as they determine the frequency of operation and ultimately the power conversion efficiency. Recently, a considerable effort focused on performance, reliable and low-cost fabrication methods. Here, we report the fabrication of sub-20 nm co-planar, asymmetric and self-forming nanogap electrodes by adhesion lithography (a-Lith) as an alternative, low-cost and large-area patterning technique. Moreover, solution processing and rapid Flash Lamp Annealing (FLA) route employed to fabricate Schottky diodes. These diodes are having more than 104 On/Off ratio, low series resistance and junction capacitance due to the novel co-planar architecture and thus operating beyond 10 GHz. This paves the way to a radically new diode technology that has a huge impact on the IoT – Wireless Energy Harvesting (WEH) and RFID system.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kalaivanan Loganathan, Emre Yengel, Hendrik Faber, Akmaral Seitkhan, Emre Yarali, Begimai Adilbekova, Shuai Yang, Weiwei Li, Azamat Bakytbekov, Atif Shamim, and Thomas Anthopoulos "Self-forming nanogap diodes operate beyond 10 GHz enabled via adhesion lithography (Conference Presentation)", Proc. SPIE 11324, Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020, 1132413 (24 March 2020); https://doi.org/10.1117/12.2562189
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