EUV photoresist reference metrology using TEM tomography

Mark Biedrzycki; Umesh Adiga; Andrew Barnum; Alain Mousa; Jason Arjavac; Rose Marie Haynes; Anne-Laure Charley; Phillipe Leray; Dmitry Batuk

doi:10.1117/12.2552139

20 March 2020 EUV photoresist reference metrology using TEM tomography

Mark Biedrzycki, Umesh Adiga, Andrew Barnum, Alain Mousa, Jason Arjavac, Rose Marie Haynes, Anne-Laure Charley, Phillipe Leray, Dmitry Batuk

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113251T (2020) https://doi.org/10.1117/12.2552139
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Process monitoring of extreme ultraviolet (EUV) photoresist requires critical dimension analysis and careful control of extracted parameters like line edge roughness (LER) and line width roughness (LWR). Automated SEM metrology typically provides estimates for these parameters, including critical dimensions and “shape, ” but at the cost of SEM exposure modifying the shape and size of the material systems. A method for acquiring and analyzing dense line structures using TEM tomography is proposed. Automation of the process from in-fab photoresist encapsulation through dual-beam lamella preparation to tomography acquisition is described, followed by a discussion of novel methods for volumetric reconstruction with metrology. Measurement capabilities are compared to CDSEM and AFM. Novel three-dimensional constructs illustrating process and property relationships in the lithography module are provided.

Conference Presentation

Citation Download Citation

Mark Biedrzycki, Umesh Adiga, Andrew Barnum, Alain Mousa, Jason Arjavac, Rose Marie Haynes, Anne-Laure Charley, Phillipe Leray, and Dmitry Batuk "EUV photoresist reference metrology using TEM tomography", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251T (20 March 2020); https://doi.org/10.1117/12.2552139

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