Improving after-etch overlay performance using high-density in-device metrology in DRAM manufacturing

Ik-Hyun Jeong; Seung-Woo Koo; Hyun-Sok Kim; Jung-Il Hwang; Dong-Jin Lee; Min-Shik Kim; Jae-Wuk Ju; Kang-Min Lee; Young-Sik Kim; Cees Lambregts; Rizvi Rahman; Marc Hauptmann; Raheleh Pishkari; Allwyn Boustheen; Kwang-Young Hu; Paul Böcker; Dong-Hak Lee; In-Ho Joo; Kang-San Lee

doi:10.1117/12.2552028

20 March 2020 Improving after-etch overlay performance using high-density in-device metrology in DRAM manufacturing

Ik-Hyun Jeong, Seung-Woo Koo, Hyun-Sok Kim, Jung-Il Hwang, Dong-Jin Lee, Min-Shik Kim, Jae-Wuk Ju, Kang-Min Lee, Young-Sik Kim, Cees Lambregts, Rizvi Rahman, Marc Hauptmann, Raheleh Pishkari, Allwyn Boustheen, Kwang-Young Hu, Paul Böcker, Dong-Hak Lee, In-Ho Joo, Kang-San Lee

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113252X (2020) https://doi.org/10.1117/12.2552028
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

In advanced DRAM semiconductor manufacturing, there is a need to reduce the overlay fingerprints. Reducing on device fingerprints with very high spatial frequency remains one of the bottlenecks to achieve sub-2nm on device overlay. After-etch device overlay measurements using the YieldStar in-device metrology (IDM)[1] allow for previously unassessed and uncontrolled fingerprints to be corrected employing higher-order overlay corrections. This is because this technology allows dramatically increased overlay metrology sampling at affordable throughputs. This paper reports considerations for enabling dense after-etch overlay based corrections in a high volume manufacturing environment. Results will be shown on a front end critical layer of SK hynix that has been sampled with IDM with high density wafer sampling, over dozens of lots spanning several weeks.

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Ik-Hyun Jeong, Seung-Woo Koo, Hyun-Sok Kim, Jung-Il Hwang, Dong-Jin Lee, Min-Shik Kim, Jae-Wuk Ju, Kang-Min Lee, Young-Sik Kim, Cees Lambregts, Rizvi Rahman, Marc Hauptmann, Raheleh Pishkari, Allwyn Boustheen, Kwang-Young Hu, Paul Böcker, Dong-Hak Lee, In-Ho Joo, and Kang-San Lee "Improving after-etch overlay performance using high-density in-device metrology in DRAM manufacturing", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113252X (20 March 2020); https://doi.org/10.1117/12.2552028

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