Translator Disclaimer
Paper
23 March 2020 Explorations of missing hole defect in EUV patterning
Author Affiliations +
Abstract
Although EUV process was actually inserted to HVM as realistic photographic scaling driver relieving from Multiple patterning, process/material induced defect, especially missing type defect on via hole, must be serious problem and it is really considerable subject. In our previous work, the existing of latent defect around hole bottom was examined and effective solution for defect suppression utilizing robust etching technique was introduced [1]. Additional de-scumming process before etching of under SoG layer has wider capability to suppress the missing hole defect, however, photolithographic relevant problem has to be solved in photolithography area. In this study, assuming that the origin of not-opened hole might be insolubilized potion in photo-resist film, we examined mainly interfacial reaction between photo-resist and under-layer. Historically, adhesive work(W) have been studied to prevent the peeling or collapsing of resist pattern mainly [2][3][4]. In order to understand the reason to be insoluble the solubilized region despite exposed, de-protected and polarity changed. This paper would introduce our examination results about the infliction of resist adhesive work with modified underlayer surface and mention about our explorations of insolubilized mechanism.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidetami Yaegashi, Arisa Hara, Soichiro Okada, and Satoru Shimura "Explorations of missing hole defect in EUV patterning", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260E (23 March 2020); https://doi.org/10.1117/12.2551471
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Staggered pillar patterning using 0.33NA EUV lithography
Proceedings of SPIE (March 26 2019)
Dots-on-the-fly electron beam lithography
Proceedings of SPIE (March 22 2016)
EUVL square mask patterning with TaN absorber
Proceedings of SPIE (December 27 2002)
Line width roughness control for EUV patterning
Proceedings of SPIE (March 23 2012)

Back to Top