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23 March 2020 Explorations of missing hole defect in EUV patterning
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Although EUV process was actually inserted to HVM as realistic photographic scaling driver relieving from Multiple patterning, process/material induced defect, especially missing type defect on via hole, must be serious problem and it is really considerable subject. In our previous work, the existing of latent defect around hole bottom was examined and effective solution for defect suppression utilizing robust etching technique was introduced [1]. Additional de-scumming process before etching of under SoG layer has wider capability to suppress the missing hole defect, however, photolithographic relevant problem has to be solved in photolithography area. In this study, assuming that the origin of not-opened hole might be insolubilized potion in photo-resist film, we examined mainly interfacial reaction between photo-resist and under-layer. Historically, adhesive work(W) have been studied to prevent the peeling or collapsing of resist pattern mainly [2][3][4]. In order to understand the reason to be insoluble the solubilized region despite exposed, de-protected and polarity changed. This paper would introduce our examination results about the infliction of resist adhesive work with modified underlayer surface and mention about our explorations of insolubilized mechanism.
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Hidetami Yaegashi, Arisa Hara, Soichiro Okada, and Satoru Shimura "Explorations of missing hole defect in EUV patterning", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260E (23 March 2020);


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