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24 March 2020 Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)
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Abstract
We performed molecular dynamics (MD) simulation to study the evaluation of silicon germanium alloy (SiGe) damage with oxidation behavior after plasma gas treatments. Our study provides a fundamental understanding of the atomistic/ molecular level of SiGe behavior after plasma etching of a contact etch stop layer (CESL). We found that simulation results are very good agreement with experimental data from Secondary ion mass spectroscopy (SIMS) and Transmission Electron Microscope (TEM)/ Energy-dispersive X-ray spectroscopy (EDS) and the detailed atom and bond analysis are obtained to study the surface reaction during the plasma process
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Hojin Kim, Yun Han, Mingmei Wang, Andrew Metz, and Peter Biolsi "Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)", Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 1132908 (24 March 2020); https://doi.org/10.1117/12.2552039
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