The research of InSb on Si avalanche photodiode

Hongling Peng; Yingqiang Xu; Wanhua Zheng

doi:10.1117/12.2542193

18 December 2019 The research of InSb on Si avalanche photodiode

Hongling Peng, Yingqiang Xu, Wanhua Zheng

Proceedings Volume 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications; 113340E (2019) https://doi.org/10.1117/12.2542193
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

We demonstrate a bonding InSb/Si wafer and its application in APD. An InSb/Si APD with high gain and high bandwidth is discussed. Bonding wafer of InSb and Si is suitable to fabricate InSb/Si APD. The InSb/Si APD will have better performance than InSb APD, and it is suited for the detection in passive imaging and active imaging operation.

Citation Download Citation

Hongling Peng, Yingqiang Xu, and Wanhua Zheng "The research of InSb on Si avalanche photodiode", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113340E (18 December 2019); https://doi.org/10.1117/12.2542193

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