Paper
18 December 2019 Nonlinear terahertz metamaterials absorber based on InAs
Miao Chen, Wei Yan, Liuwen Zeng, Fuhua Yang, Zhaofeng Li
Author Affiliations +
Abstract
In this paper we present a novel nonlinear metamaterials absorber consisting of a gold cross structure resonator, and a ndoped InAs ground plane separated by a GaAs spacer. When the incident field strength rises from 60𝑘𝑉 ∙ 𝑐𝑚−1 to 300𝑘𝑉 ∙ 𝑐𝑚−1, the absorption at resonance frequency is reduced by 70% due to the nonlinear response of n-doped InAs ground plane. To the best of our knowledge, the modulation depth of our design is higher than previous works on nonlinear absorber. The mechanism behind the modulation is demonstrated by transmission line model analysis and numerical simulations. The proposed structure eliminates the side effect brought by the substrate and can be developed to dual-band nonlinear metamaterials absorber. Such flexible design may find its applications in ultrafast terahertz optics and passive protection of sensitive electromagnetic devices.
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Miao Chen, Wei Yan, Liuwen Zeng, Fuhua Yang, and Zhaofeng Li "Nonlinear terahertz metamaterials absorber based on InAs", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113341K (18 December 2019); https://doi.org/10.1117/12.2542528
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KEYWORDS
Absorption

Indium arsenide

Semiconductors

Terahertz radiation

Resonators

Gold

Modulation

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