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20 April 2020 Optoelectronic devices with active region based on InGaAs/GaAs quantum well-dots
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We report on broad-area lasers, mode-locked lasers (MLLs), and superluminescent light-emitting diodes (SLDs) based on a recently developed novel type of nanostructures that we refer to as quantum well-dots (QWDs). The QWDs are intermediate in properties between quantum wells and quantum dots and combine some useful properties of both. 1.08 μm InGaAs/GaAs QWDs broad area edge-emitting lasers based on coupled large optical cavity waveguides show high internal quantum efficiency of 92%, low internal loss of 0.9 cm-1 and material gain of ~1.1∙104 cm-1 per one QWD layer. CW output power of 14.2 W is demonstrated at room temperature. Superluminescent light-emitting diodes with one QWD layer in the active region exhibit stimulated emission spectra centered at 1050 nm with the maximal full width at half maximum of 36 nm and the output power of 17 mW. First results on mode-locked operation in QWD lasers are also presented. 2 mm long two-section devices demonstrate the pulse repetition rate of 19.3 GHz and the pulse duration of 3.5 ps. The width of the radio frequency spectrum is 0.2 MHz.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. V. Maximov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, G. O. Kornyshov, A. A. Serin, A. A. Usikova, I. M. Gadzhiev, M. M. Kulagina, A. M. Nadtochiy, and A. E. Zhukov "Optoelectronic devices with active region based on InGaAs/GaAs quantum well-dots", Proc. SPIE 11356, Semiconductor Lasers and Laser Dynamics IX, 113560A (20 April 2020);


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