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2 April 2020 Development of integrated photonics based on SiO2:TiO2 sol-gel derived waveguide layers: state of the art, perspectives, prospective applications
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Abstract
In this paper we discuss the technology of SiO2:TiO2 waveguide films produced via sol-gel method and dip-coating technique, mastered at Silesian University of Technology. The technology allows fabrication of 150–300 nm thick waveguide films in single step deposition process and up to 500 nm thick with multiple step deposition process. The typically fabricated waveguide films have refractive index of ~1.8, however this value can be arbitrary altered from 1.45 to 1.94. The developed technology allows fabrication of waveguides having propagation losses below 0.2 dB/cm. The up-to-now fabricated waveguide films seem to be very promising. However biggest stumbling block in their application lays in elaboration of efficient patterning techniques. Currently the technology is developed towards an efficient way of waveguide layers patterning and introducing rare earth ions into the waveguide layers. The patterning technology will be developed in a twofold way, including mainly deep and shallow strip waveguide structures. The deeply patterned waveguide structures will be fabricated either with the direct nanoimprint of waveguide layer or in a more conventional way by using electron beam lithography and dry plasma etching. The fabrication of shallowly patterned waveguide structures will be carried out using also direct nanoimprint or alternatively photolithography combined with wet chemical etching.
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Paweł Karasiński, Cuma Tyszkiewicz, Ryszard Piramidowicz, and Andrzej Kaźmierczak "Development of integrated photonics based on SiO2:TiO2 sol-gel derived waveguide layers: state of the art, perspectives, prospective applications", Proc. SPIE 11364, Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, 1136414 (2 April 2020); https://doi.org/10.1117/12.2559059
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