11 October 1989 Excimer Lasers For Lithography Applications
Author Affiliations +
Proceedings Volume 1138, Optical Microlithography and Metrology for Microcircuit Fabrication; (1989) https://doi.org/10.1117/12.961751
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
The advantage of excimer lasers over conventional UV lamps for microlithography will be discussed and the difficulties encountered will be reviewed. The first application of excimer lasers was in contact printing where the short wavelength of 193 nm of ArF is used to produce sub-half-micron resolution typically on GaAs chips. The first use of excimer lasers in the field of projection printing was in the area of reticle manufacturing. 308 nm XeC1 lasers are used in pattern generators to produce the pixels of the reticle pattern. A very promising field of applications is in the domaine of reduction wafer steppers which produce a demagnified image of the reticle on silicon wafer. Despite the numerous problems in designing a DUV stepper, the wafer stepper with excimer laser source seems to be the logical choice for the next generation of highly integrated circuit manufacturing. Finally, a promising but still distant possible application could be a 1 : 1 print using phase conjugation to circumvent the need for highly sophisticated optics between reticle and wafer.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elmar Cullmann, Elmar Cullmann, } "Excimer Lasers For Lithography Applications", Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); doi: 10.1117/12.961751; https://doi.org/10.1117/12.961751


LWR enhancement for 300mm track processing
Proceedings of SPIE (March 12 2018)
Advances In Excimer Laser Lithography
Proceedings of SPIE (August 31 1987)
Shipping, handling, and storage of reticles
Proceedings of SPIE (August 24 1999)
Performance appraisal of the ATEQ CORE-2500 in production
Proceedings of SPIE (February 28 1991)
Business dynamics of lithography at very low k1 factors
Proceedings of SPIE (July 25 1999)
Near 0.3 k1 full pitch range contact hole patterning using...
Proceedings of SPIE (December 16 2003)
Advances In Excimer Laser Lithography
Proceedings of SPIE (March 10 1987)

Back to Top