28 September 1989 Localization Of Failures In Electronic Devices With A Laser Scan Microscope Using A Golden Device Test
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Proceedings Volume 1139, Optical Storage and Scanning Technology; (1989) https://doi.org/10.1117/12.961767
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Two methods are described allowing the localization of defects (e.g. hot spots, leakage currents, electrostatic discharge defects) in electric devices using the OBIC (optical beam induced current) signal produced by a laser scan microscope. Knowledges about the generation of the OBIC and the design of the integrated circuit are not needed. In both methods the OBIC signals of a device under test and a good reference device (golden device) are compared. The difference between the two OBIC - images reveals any dissimilarities and in this way localizes defects in a device under test.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Ziegler, E. Ziegler, } "Localization Of Failures In Electronic Devices With A Laser Scan Microscope Using A Golden Device Test", Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); doi: 10.1117/12.961767; https://doi.org/10.1117/12.961767


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