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28 September 1989 Micrometrology Of Thick Structures
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Proceedings Volume 1139, Optical Storage and Scanning Technology; (1989) https://doi.org/10.1117/12.961770
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
In micrometrology of thin line structures, in for example the semiconductor wafer fabrication industry, it is necessary to locate accurately the positions of edges in order to provide dimensional information concerning the structure. In some cases all that is required is reproducability, and measurements can be calibrated against known structures. However, in order to extract as much information as possible from the measured profiles, it is necessary to have an accurate model to predict the image profile from the structure. Structures resulting from semiconductor microlithography are often several wavelengths thick, making any attempt at image calculation difficult. Several attempts at the rigorous modelling of thick gratings have been made. This paper will concentrate on providing an overview of the current state of imaging and proposing several simple models for this task. Towards this end, the imaging of a surface-relief square wave dielectric grating of between 0.1 and 20.1 wavelengths (λ) period (Λ) and for 0 to 2 wavelengths thickness (d) are discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. J. R. Sheppard and J. T. Sheridan "Micrometrology Of Thick Structures", Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); https://doi.org/10.1117/12.961770
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