28 September 1989 Obic-Investigations Of Integrated Circuits Using A Laser Scanning Microscope With Different Excitation Wavelengths
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Proceedings Volume 1139, Optical Storage and Scanning Technology; (1989) https://doi.org/10.1117/12.961774
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
A laser scanning microscope with an OBIC stage is used to investigate internal binary states of integrated circuits and diffusion parameters of the semiconductor material applying different laser wavelengths. The internal logical states of the circuit could be detected using blue and red laser radiation. Red and IR radiation are used to investigate the depth and location of doped wells. Applying three wavelengths it could be distinguished between surface and bulk recombination in the semiconductor material. The OBIC images of a CMOS inverter and a complete NOR-gate consisting of 10 transistors are analyzed in dependence on the logical input pattern.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Bergner, Harald Bergner, Tobias Damm, Tobias Damm, "Obic-Investigations Of Integrated Circuits Using A Laser Scanning Microscope With Different Excitation Wavelengths", Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); doi: 10.1117/12.961774; https://doi.org/10.1117/12.961774
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