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28 September 1989 Scanning Laser And Optical Beam Induced Current Methods For Failure Analysis Of Electronic Devices (#)
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Proceedings Volume 1139, Optical Storage and Scanning Technology; (1989) https://doi.org/10.1117/12.961768
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
Optical beam testing methods offer several advantages with respect to conventional Scanning Electron Microscopy (SEM) techniques for failure analysis of integrated circuits and discrete devices: they do not require vacuum, avoid MOS and oxide damaging in OBIC (Optical Beam Induced Current) tests. This paper describes the application of scanning laser techniques to failure analysis of integrated circuits and discrete devices. Results have been obtained by means of a commercially available laser system (Biorad Lasersharp SOM 150), equipped with a visible (He-Ne 633 nm, 15 mW) and an IR (laser-diode-pumped Nd:YAG 1320 nm, 25 mW) laser source.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gaetano Grasso, Michele Muschitiello, Michele Stucchi, and Enrico Zanoni "Scanning Laser And Optical Beam Induced Current Methods For Failure Analysis Of Electronic Devices (#)", Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); https://doi.org/10.1117/12.961768
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