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27 November 1989 Multilayers For X- In Optics
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Abstract
The design and preparation of multilayers for X-UV Schwarzschild microscopes for laser created plasmas imaging is described. WRe/Si, Mo/Si, and Rh/C multilayers have been made for imaging at 30.4 nm, 15.5 nm, and 11.4 rim respectively. In order to evaluate the transmission of the optical system, the lateral thickness variation of the multilayers is calculated from the geometrical characteristics of the deposition system. The interface roughness, deduced from the value of the relectivity as a function of thickness measured during the multilayer deposition, is taken into account for the calculation of the multilayer reflectivity.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Chauvineau "Multilayers For X- In Optics", Proc. SPIE 1140, X-Ray Instrumentation in Medicine and Biology, Plasma Physics, Astrophysics, and Synchrotron Radiation, (27 November 1989); https://doi.org/10.1117/12.961861
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