27 November 1989 Silicon Photodiodes With Stable, Near-Theoretical Quantum Efficiency In The Soft X-Ray Region
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Abstract
Silicon photodiodes having practically no carrier recombination at the Si-SiO2 interface or in the front diffused region have been developed by defect-free n-type impurity diffusion into p-type silicon. These photodiodes exhibit very high quantum efficiencies in the 10 eV to 150 eV photon energy region, typically 37 electrons per photon at 150 eV, which is about 300 times the quantum efficiency of the more commonly used photoemissive type soft X-ray detectors. The quantum efficiency of the developed diodes has been found to be stable to a few percent after exposure to photons in the region of 5eV to 200eV, with fluences in excess of 1014/cm2. No significant change in the quantum efficiency was observed after storage in air for several months.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raj Korde, L. Randall Canfield, "Silicon Photodiodes With Stable, Near-Theoretical Quantum Efficiency In The Soft X-Ray Region", Proc. SPIE 1140, X-Ray Instrumentation in Medicine and Biology, Plasma Physics, Astrophysics, and Synchrotron Radiation, (27 November 1989); doi: 10.1117/12.961812; https://doi.org/10.1117/12.961812
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