Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure

D. R. Fink; S. Lee; S. H. Kodati; V. Dahiya; T. J. Ronningen; M. Winslow; C. H. Grein; A. H. Jones; J. C. Campbell; J. F. Klem; S. Krishna

doi:10.1117/12.2557105

23 April 2020 Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure

D. R. Fink, S. Lee, S. H. Kodati, V. Dahiya, T. J. Ronningen, M. Winslow, C. H. Grein, A. H. Jones, J. C. Campbell, J. F. Klem, S. Krishna

Author Affiliations +

Proceedings Volume 11407, Infrared Technology and Applications XLVI; 114070I (2020) https://doi.org/10.1117/12.2557105
Event: SPIE Defense + Commercial Sensing, 2020, Online Only

Abstract

We present a method of determining the background doping type in semiconductors using capacitance-voltage measurements on overetched double mesa p-i-n or n-i-p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p-n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p-i-n and n-i-p structures, determined that the material is residually doped p-type, which is well established by other sources. The method was then applied on a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

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D. R. Fink, S. Lee, S. H. Kodati, V. Dahiya, T. J. Ronningen, M. Winslow, C. H. Grein, A. H. Jones, J. C. Campbell, J. F. Klem, and S. Krishna "Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 114070I (23 April 2020); https://doi.org/10.1117/12.2557105

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