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23 April 2020 Sb-based third generation at Center for Quantum Devices
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Abstract
Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi "Sb-based third generation at Center for Quantum Devices", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 114070T (23 April 2020); https://doi.org/10.1117/12.2564813
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