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6 December 1989 Grafted GaAs Detectors On Lithium Niobate And Glass Optical Waveguides
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Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961907
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
We report the first integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO3 and glass optical waveguides. A 250nm thick GaAs detector layer was fabricated using a recently reported lift-off technique [1] and subsequently grafted onto the waveguide chip. Proof of the optical interaction between the waveguide and its grafted detector was provided by the total absorption of 633nm guided light within a distance of 1mm from the leading edge of the GaAs layer and by the presence of a photocurrent at the detector terminals. We project that the grafting technique reported here will prove useful in the design of new and cost effective optoelectronic devices.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Yi-Yan, W. K. Chan, T. J. Gmitter, L. T. Florez, J. L. Jackel, E. Yablonovitch, R. Bhat, and J. P. Harbison "Grafted GaAs Detectors On Lithium Niobate And Glass Optical Waveguides", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961907
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