Monolithic Integration Of GaAs Electronics And Inp Waveguides For Long Wavelength Optical Switching Networks.

A. Ackaert; P. Demeester; D. Lootens; P. Van Daele; D. Rondi; G Glastre; Y. Bourbin; A. Enard; R. Blondeau; M. Papuchon

doi:10.1117/12.961886

6 December 1989 Monolithic Integration Of GaAs Electronics And Inp Waveguides For Long Wavelength Optical Switching Networks.

A. Ackaert, P. Demeester, D. Lootens, P. Van Daele, D. Rondi, G Glastre, Y. Bourbin, A. Enard, R. Blondeau, M. Papuchon

Author Affiliations +

Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961886
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

GaAs MESFETs are very promising for the fabrication of the electronic part of long wavelength InP-based optoelectronic integrated circuits. A special growth procedure has been developed for the heteroepitaxial growth of GaAs on InP. This resulted in MESFET performances similar to results obtained on GaAs substrates. A transconductance of 100 mS/mm and a cutt-off frequency of 7 GHz was obtained for 1.5μm gate MESFETs. The monolithic integration of GaAs MESFETs and InP buried waveguides did not influence their performances.

Citation Download Citation

A. Ackaert, P. Demeester, D. Lootens, P. Van Daele, D. Rondi, G Glastre, Y. Bourbin, A. Enard, R. Blondeau, and M. Papuchon "Monolithic Integration Of GaAs Electronics And Inp Waveguides For Long Wavelength Optical Switching Networks.", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961886

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