6 December 1989 Numerical Simulation Of The Nonlinear Response In A P.I.N. InGaAs Waveguide-Type Photodiode Under Intense Illumination
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Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961895
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
The paper deals with the study and numerical simulation of the nonlinear electrical response of a waveguide-type P.I.N. InGaAs photodiode under intense illumination conditions, including the harmonic generation rate calculation. Indeed, significant optical power absorption in a small-sized device (i.e. microwave waveguide-type P.I.N. photodiode) can perturb, by space-charge effects, the electric field which governs the carrier transport, and then induce a nonlinear electrical response. The device depolarization, due to the current flow in the load circuit, also causes a nonlinearity via the internal electric field perturbation. These nonlinearities induce harmonics, and we investigate especially the third-order harmonics creation, which is closely connected to the third-order intermodulation products term in any narrow-band multichannel network.
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Martin Dentan, Martin Dentan, Baudouin de Cremoux, Baudouin de Cremoux, } "Numerical Simulation Of The Nonlinear Response In A P.I.N. InGaAs Waveguide-Type Photodiode Under Intense Illumination", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961895; https://doi.org/10.1117/12.961895
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