6 December 1989 Polyimide-Embedded Semiconductor Ring Lasers.
Author Affiliations +
Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961884
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
The fabrication of integrated ring semiconductor lasers has been simplified by embedding the etched rib waveguide structures in polyimide and overcoating with a gold bonding layer. Structures defined by optical lithography lased successfully, while e-beam defined devices with very narrow rib structures were optically lossy, resulting in increased threshold current and evidence of second quantised state operation.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej F. Jezierski, Andrzej F. Jezierski, Peter J.R. Laybourn, Peter J.R. Laybourn, "Polyimide-Embedded Semiconductor Ring Lasers.", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961884; https://doi.org/10.1117/12.961884

Back to Top