Research on ultrathin silicon-based electro-optic modulators

Haifeng Guo; Jianxun Hong; Zhisheng Zheng; Hua Ge

doi:10.1117/12.2543200

12 March 2020 Research on ultrathin silicon-based electro-optic modulators

Haifeng Guo, Jianxun Hong, Zhisheng Zheng, Hua Ge

Proceedings Volume 11435, 2019 International Conference on Optical Instruments and Technology: Optical Communication and Optical Signal Processing; 1143506 (2020) https://doi.org/10.1117/12.2543200
Event: 2019 International Conference on Optical Instruments and Technology, 2019, Beijing, China

Abstract

Electro-optic (EO) modulators based on ultrathin silicon were studied by using the finite element method (FEM), the thickness and the width of the thin silicon waveguide core are 60 nm and 1 μm. The impacts of the parameters of the electrode on the electro-optic overlap integral factor was analyzed. The electrode for the TE mode operation were optimized. Results show that gold electrode putting on the oxide buffer at the position of 1.4 μm, and the width of the gold electrode is 10.8 μm can produce a good overlap integral factor as high as 0.6 and the impedance is about 50 Ω.

Citation Download Citation

Haifeng Guo, Jianxun Hong, Zhisheng Zheng, and Hua Ge "Research on ultrathin silicon-based electro-optic modulators", Proc. SPIE 11435, 2019 International Conference on Optical Instruments and Technology: Optical Communication and Optical Signal Processing, 1143506 (12 March 2020); https://doi.org/10.1117/12.2543200

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