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12 March 2020 Research on ultrathin silicon-based electro-optic modulators
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Abstract
Electro-optic (EO) modulators based on ultrathin silicon were studied by using the finite element method (FEM), the thickness and the width of the thin silicon waveguide core are 60 nm and 1 μm. The impacts of the parameters of the electrode on the electro-optic overlap integral factor was analyzed. The electrode for the TE mode operation were optimized. Results show that gold electrode putting on the oxide buffer at the position of 1.4 μm, and the width of the gold electrode is 10.8 μm can produce a good overlap integral factor as high as 0.6 and the impedance is about 50 Ω.
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Haifeng Guo, Jianxun Hong, Zhisheng Zheng, and Hua Ge "Research on ultrathin silicon-based electro-optic modulators", Proc. SPIE 11435, 2019 International Conference on Optical Instruments and Technology: Optical Communication and Optical Signal Processing, 1143506 (12 March 2020); https://doi.org/10.1117/12.2543200
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