Translator Disclaimer
12 March 2020 Research on ultrathin silicon-based electro-optic modulators
Author Affiliations +
Electro-optic (EO) modulators based on ultrathin silicon were studied by using the finite element method (FEM), the thickness and the width of the thin silicon waveguide core are 60 nm and 1 μm. The impacts of the parameters of the electrode on the electro-optic overlap integral factor was analyzed. The electrode for the TE mode operation were optimized. Results show that gold electrode putting on the oxide buffer at the position of 1.4 μm, and the width of the gold electrode is 10.8 μm can produce a good overlap integral factor as high as 0.6 and the impedance is about 50 Ω.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haifeng Guo, Jianxun Hong, Zhisheng Zheng, and Hua Ge "Research on ultrathin silicon-based electro-optic modulators", Proc. SPIE 11435, 2019 International Conference on Optical Instruments and Technology: Optical Communication and Optical Signal Processing, 1143506 (12 March 2020);

Back to Top