1.3 Ã‚Âµm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate

I. Ushijima; S. Osaka; A. Fukushima; T. Ohizumi; S. Nakai; K. Kihara; S. Isozumi; T. Shibata

doi:10.1117/12.962028

28 November 1989 1.3 µm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate

I. Ushijima, S. Osaka, A. Fukushima, T. Ohizumi, S. Nakai, K. Kihara, S. Isozumi, T. Shibata

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962028
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

1.3 µm Flat-surface Buried Heterostructure (FBH) laser diode fabricated on a p-type substrate is reported. This laser exhibits a low threshold current and excellent lasing characteristics up to 120°C. For high temperature range operation, it is found that the active layer thickness plays an important role. Stable CW operation has been confirmed in 85°C 5 mW aging test.

Citation Download Citation

I. Ushijima, S. Osaka, A. Fukushima, T. Ohizumi, S. Nakai, K. Kihara, S. Isozumi, and T. Shibata "1.3 µm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962028

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