28 November 1989 A Monolithically Integrated Receiver Front-End Comprising Ion-Implanted Lateral Interdigitated InGaAs Pin And Inp JFET Devices
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962021
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
An optical receiver front-end consisting of a lateral interdigitated InGaAs PIN photodetector integrated with an InP JFET amplifier has been fabricated by selective ion implantation. The lateral interdigitated InGaAs PlN is integrated here for the first time. The advantages of the lateral detector structure are its inherently low capacitance and the simplification of the InGaAs material growth requirement to a single layer. A quasi-planar integration approach has been developed in conjunction with a two-level metallisation interconnect scheme employing polyimide as the inter-level dielectric. An optical sensitivity of -29 dBm has been measured at 560 Mbit/s and 1.3 µm wavelength.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. S. Lee, W. S. Lee, S. A. Kitching, S. A. Kitching, S. W. Bland, S. W. Bland, "A Monolithically Integrated Receiver Front-End Comprising Ion-Implanted Lateral Interdigitated InGaAs Pin And Inp JFET Devices", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962021; https://doi.org/10.1117/12.962021
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