28 November 1989 A Study Of Enhanced Barrier Height Gates For n-InP MESFET's
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962019
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
We developed a surface passivation technique to enhance the barrier height of n-InP and studied the stability of the resultant contacts. The results showed that the passivation produced nearly-ideal Schottky contacts with substantially enhanced barrier heights (Φb = 0.83). We used the passivation technique to fabricate an n-channel InP FET with enhanced barrier height gates. The devices showed high stability, a maximum transconductance of 60 mS/mm and high break-down voltages. The high stability and performance of these devices demonstrates the potential this passivation holds in developing gate metallization technology for InP.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. A. Iliadis, A. A. Iliadis, W. Lee, W. Lee, O. A. Aina, O. A. Aina, } "A Study Of Enhanced Barrier Height Gates For n-InP MESFET's", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962019; https://doi.org/10.1117/12.962019
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