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28 November 1989 Altering The Composition Of GaInPAs Grown By The Hydride Technique By Introducing HC1 Downstream
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961989
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Thermodynamic calculations show that the In and Ga concentrations in GaInPAs change when HC1 is introduced down stream during growth by the hydride method. This results from HC1 reducing the incorporation of In more than it does for Ga. The effect is larger for the initially lattice matched material containing more Ga and therefore emitting light at longer wavelengths. The group V composition also changes with the As mole fraction increasing in intially lattice matched material containing less As and therefore emitting at shorter wavelengths. These results were qualitatively confirmed by experiment. Thus, in principle, lattice matched GaInPAs superlattices can be grown by periodically injecting HC1 downstream and simultaneously adjusting the PH3 and AsH3 flow rates.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. A. Jones, V. S. Ban, G. H. Olsen, and C. H. Park "Altering The Composition Of GaInPAs Grown By The Hydride Technique By Introducing HC1 Downstream", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961989
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