28 November 1989 Characterization Of InP On Si Grown By MBE
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989); doi: 10.1117/12.961991
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
The characterization of large area InP single crystal films grown by gas-source MBE on (100) Si substrates is described. To accomodate the 8% InP-Si lattice mismatch, a strained-layer superlattice of InGaP was used as a buffer layer. The dislocation density in the InP, as determined by TEM, was 108 cm-2 and the x-ray diffraction line width of the (400) InP peak was found to be 435 arc sec in annealed films. InP films of 3-4 pm in thickness exhibited specular morphology, low temperature photoluminescence line widths of 6-17 meV, and room temperature electron mobilities of 1900-2300 cm2/V-s. These initial results indicate that optoelectronic devices utilizing a monolithic InP/Si technology are feasible.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Y. Lee, T. E. Crumbaker, M. J. Hafich, G. Y. Robinson, M. M. Al-Jassim, K. M. Jones, "Characterization Of InP On Si Grown By MBE", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961991; https://doi.org/10.1117/12.961991
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