28 November 1989 Characterization Of InP Surfaces Using Integral Photoluminescence Measurements
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962008
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
The integral Photoluminescence (PL) signal of an InP surface has been shown to be correlated with its electronical quality. Moreover, measuring the PL is nondestructive and does not require sophisticated environment or equipment. Thus, the integral PL is suited as a tool to in situ study the influence of process steps on an InP surface. In our effort to improve the interface properties of InP MIS structures we used PL to investigate the effect of chemical etchants on the electronical and chemical nature of the InP surface and conducted PL measurements during heating and exposure to a plasma. Well defined conditions are required to obtain useful data. Also, laser induced effects in the InP/ambient system are investigated in detail. In addition informations may be obtained about the chemical nature of the surface layer and the reactions taking place during exposure to an ambient.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. J. Frenck, H. J. Frenck, W. Kulisch, W. Kulisch, R. Kassing, R. Kassing, "Characterization Of InP Surfaces Using Integral Photoluminescence Measurements", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962008; https://doi.org/10.1117/12.962008
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