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28 November 1989 Definitive Identification Of The Fe3+/Fe2+ Level In Ga0.47In0.53As Layers
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961983
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
We give an unambiguous identification of the single acceptor level (Fe3+/Fe2+) related to iron in Ga0.47In0.53As and a coherent description of its electrical and optical properties using photoluminescence, thermal and optical capacitance spectroscopies. Investigated layers are either Fe doped or undoped and grown on semi insulating Fe doped InP or n+ substrates by LPE or MBE methods. The internal photoluminescence transition of Fe2+ (5T2-5E) is detected at 0.35eV in the ternary for the first time. Deep level transient spectroscopy measurements show one deep level at Ec-0.34eV which we identify as being caused by the Fe3+/Fe2+ acceptor level. This is confirmed by the o (hv) spectrum of the photoionization cross-section which shows a very well marked resonance peak at 0.34eV due to the transition to the 5T2, excited state. Finally, we discuss the validity of the internal referred binding energy model to predict the band discontinuity in the InP/GaInAs system using the Fe3+/Fe2+ energy level position in the two materials.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Guillot, T. Benyattou, F. Ducroquet, B. Wirth, M. Colombet, A. Louati, and A. Bencherifa "Definitive Identification Of The Fe3+/Fe2+ Level In Ga0.47In0.53As Layers", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961983
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