28 November 1989 Electrical Properties Of InxPNy-InP MIS Structures
Author Affiliations +
Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962007
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Effects of deposition conditions on the interface properties of Inx PNy-InP metal - insulator - semiconductor (MIS) structure made by chemical vapor deposition (CVD) of InxPNy films onto InP substrates using PC13, NH3 and In as reagents were investigated. The composition of the films was varied from phosphorous nitride (PNx) without inclusion of In to InxPNy by changing the rate of the gas flow to introduce In during deposition. Electrical properties of the deposited films were found to depend on the concentration of In in the films. By introducing a small amount of In into phosphorous nitride films, the reduction of the frequency dispersion and the hysteresis width of capacitance-voltage (C-V) curve of MIS diodes was achieved. It was also found that the hysteresis type of C-V curve changed from electron injection type to ion drift type according to the amount of In introduced into the film. The density of fast interface trap states as determined from high frequency C-V measurement exhibits minima as low as 1010eV-1 cm-2.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Iwase, F. Arai, T. Sugano, "Electrical Properties Of InxPNy-InP MIS Structures", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962007; https://doi.org/10.1117/12.962007
PROCEEDINGS
8 PAGES


SHARE
Back to Top