28 November 1989 Electron-Hole Scattering And Minority-Electron Transport in In0.53Ga 0.47As, InAs, and InP: The Role Of The Split-Off Band
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961992
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
We report a Monte-Carlo investigation of Coulomb electron-hole scattering processes involving the split-off band in selected III-V semiconductors in the context of steady-state high-field minority-electron transport. Due to the small value of the relevant hole overlap factors, as well as the relative values of the r-L energy separation and the split-off energy, such processes do not make a significant contribution to the minority electron energy loss rate in In0.53Ga0.47As. In InP, however, the rhrs process accounts for a significant fraction of the total r-electron energy loss to holes.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Sadra, C. M. Maziar, B. G. Streetman, "Electron-Hole Scattering And Minority-Electron Transport in In0.53Ga 0.47As, InAs, and InP: The Role Of The Split-Off Band", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961992; https://doi.org/10.1117/12.961992
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