28 November 1989 Epitaxial InP And Related III-V Compounds Applied To Solar Cells
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962034
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
The application of InP and related low-bandgap, III-V alloys grown by atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE) to photovoltaics is discussed. The work is presented in two parts: the first is aimed at increasing the performance of InP shallow-homojunction cells via improved emitter designs, and the second concerns the development of InP-related low-bandgap ternary and quaternary compounds, and fabrication of solar cells therein. The emitter design study focussed on the majority and minority carrier transport properties of S-doped InP epilayers. This study has resulted in InP shallow-homojunction cells exhibiting substantial improvements in blue response. However, compensating losses in open-circuit voltage and fill-factor prevented overall gains in cell conversion efficiency. The development of solar cells in epilayers of InAsyPi1-y, Ga0.47In0.53As and GaxIn1-xAsyP1-y as applied to tandem solar cells is also discussed. Low-bandgap cells with good performance have been fabricated and areas for futher improvement have been outlined.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. W. Wanlass, G. S. Horner, T. A. Gessert, T. J. Coutts, I. Weinberg, "Epitaxial InP And Related III-V Compounds Applied To Solar Cells", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962034; https://doi.org/10.1117/12.962034
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