Much of the InGaAsP film growth work has been limited to small, single wafer growths. The purpose of this work was to demonstrate good materials properties, especially uniformity, on a multi-wafer system. InGaAsP materials on (100) InP substrates have been grown in a high speed rotating disk reactor using low pressure Metalorganic Chemical Vapor Deposition (MOCVD). Rotation speeds of 500 to 1500 RPM, growth pressures from 30 to 90 Torr, and trimethylindium and triethylgallium sources were used. On a three, two-inch wafer reactor, thickness uniformity of less than ±2% and lattice mismatch uniformity of less than ±1x10-4 has been repeatably obtained on both InGaAs and InGaAsP (1.2 micron wavelength). The effect of growth pressure and rotation speed on uniformity is discussed with reference to flow dynamical models of the rotating disk reactor. In addition to uniformity, good bulk properties were obtained. High purity InGaAs films with electron mobilities of 95,000cm2/VS at 77K were produced. Room temperature photoluminescence intensity of both InGaAs and InGaAsP films were similar to an LPE standard.