28 November 1989 Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961978
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Low-dislocation-density InP single crystals have been successfully grown under the low axial temperature gradient of dT/dZ = 30°C/cm by the VCZ method, which is an LEC method with phosphorus vapor pressure applied over the liquid encapsulant during growth. The average EPD is about 2,000 cm-2 in the 2-inch diameter crystals doped with Fe or Sn. The slip-free and dislocation-free crystals have been obtained by doping S of 2 x 1018cm-3 at the seed end. The InP crystals have uniform distributions of electrical properties with variations of less than 2%. The photoluminescence measurements of Sn-doped crystal have revealed no deep level due to phosphorus vacancy. The VPE InGaAs layer grown on the S-doped VCZ substrate exhibits few propagated dislocations and a very low leak current.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Tatsumi, M. Tatsumi, T. Kawase, T. Kawase, T. Araki, T. Araki, N. Yamabayashi, N. Yamabayashi, T. Iwasaki, T. Iwasaki, Y. Miura, Y. Miura, S. Murai, S. Murai, K. Tada, K. Tada, S. Akai, S. Akai, } "Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961978; https://doi.org/10.1117/12.961978
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