28 November 1989 High Performance Ion Implanted InP Misfets Passivated With An Anodic Oxide'
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961998
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
High performance MIS field effect transistors on semi-insulating indium phosphide have been fabricated. The contacts and the channel are doped with silicon implantation. The passivation of the channel surface region is achieved by the growth of a 150 A thick specific anodic oxide, In(P03)3 condensed phosphate. The physico-chemical properties of this oxide, reported in details in a separate contribution to this conference, make this material an excellent candidate for the passivation of InP. The gate dielectric is completed with electron beam evaporated Al203. Depletion mode devices with a 2 micron channel length exhibit reproducible low saturation current drift (less than 4% after 1 hour) and high transconductance (100 mS/mm). They are well suited for integrated opto-electronics.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Falcou, A. Falcou, G. Post, G. Post, P. Viktorovitch, P. Viktorovitch, R. Blanchet, R. Blanchet, K. Choujaa, K. Choujaa, G. Hollinger, G. Hollinger, Y. Robach, Y. Robach, J . Joseph, J . Joseph, } "High Performance Ion Implanted InP Misfets Passivated With An Anodic Oxide'", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961998; https://doi.org/10.1117/12.961998
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